Publication:
Proton conductivity of Y-doped BaZrO3: Pellets and thin films

dc.contributor.authorPornprasertsuk R.
dc.contributor.authorKosasang O.
dc.contributor.authorSomroop K.
dc.contributor.authorHorprathum M.
dc.contributor.authorLimnonthakul P.
dc.contributor.authorChindaudom P.
dc.contributor.authorJinawath S.
dc.date.accessioned2021-04-05T03:35:13Z
dc.date.available2021-04-05T03:35:13Z
dc.date.issued2011
dc.date.issuedBE2554
dc.description.abstractY-doped BaZrO3 (BYZ) pellets and thin films at various doping concentrations were fabricated by the cold isostatic press and 2-step sputtering techniques, respectively. By using BaCO3, 3 mol% yttria stabilized zirconia (YSZ), nano-Y2O3 powders and 1 wt% ZnO as a sintering aid, 6-40 at% BYZ pellets with no second phase and relative bulk density higher than 97% can be achieved. The highest bulk and grain boundary proton conductivities of the BYZ pellets measured by the electrochemical impedance spectroscopy (EIS) technique were obtained at 10 and 20 at% BYZ, respectively. Due to the absence of the second phase and higher bulk density, our BYZ (1 wt% ZnO) pellets show higher bulk and grain boundary conductivity than several previously reported ZnO-BYZ results. The 2-step sputtering technique for BYZ film fabrication involved two sequential steps as followed: (i) DC sputtered Y onto BaZrO3 target and (ii) RF sputtered Y-BaZrO3 target onto SiO2/Si substrate. EIS results of BYZ thin films also verify the dependence of conductivity on the Y doping concentration and reveal 102-103 times higher conductivities than those of BYZ pellets even with some YSZ phase present. The high conductivity may arise from several factors such as the surface conduction, low contamination and change of grain boundary structure. Two ionic conduction mechanisms were observed in the thin films (in air): (i) the proton conduction at T ≤ 450 °C and (ii) the oxide ion conduction at T > 450 °C. However, under humidified H2 atmosphere, the proton conduction was dominant througout the temperature range of this study. © 2011 Elsevier Masson SAS. All rights reserved.
dc.format.mimetypeapplication/pdf
dc.identifier.citationSolid State Sciences. Vol 13, No.7 (2011), p.1429-1437
dc.identifier.doi10.1016/j.solidstatesciences.2011.04.015
dc.identifier.issn12932558
dc.identifier.other2-s2.0-79959723716
dc.identifier.urihttps://hdl.handle.net/20.500.14740/7296
dc.rights.holderScopus
dc.subject.otherBulk density
dc.subject.otherCold isostatic press
dc.subject.otherConduction Mechanism
dc.subject.otherDoping concentration
dc.subject.otherFilm fabrication
dc.subject.otherGrain boundary conductivity
dc.subject.otherGrain boundary structure
dc.subject.otherHigh conductivity
dc.subject.otherImpedance spectroscopy
dc.subject.otherOxide ion conduction
dc.subject.otherPhase present
dc.subject.otherProton conduction
dc.subject.otherRelative bulk density
dc.subject.otherSecond phase
dc.subject.otherSintering Aid
dc.subject.otherSputtering techniques
dc.subject.otherSurface conduction
dc.subject.otherTemperature range
dc.subject.otherThrougout
dc.subject.otherY-doped
dc.subject.otherY-Doping
dc.subject.otherZnO
dc.subject.otherBarium
dc.subject.otherBarium zirconate
dc.subject.otherElectric properties
dc.subject.otherElectrochemical corrosion
dc.subject.otherElectrochemical impedance spectroscopy
dc.subject.otherGrain boundaries
dc.subject.otherGrain size and shape
dc.subject.otherPelletizing
dc.subject.otherProton conductivity
dc.subject.otherProtons
dc.subject.otherSemiconducting silicon compounds
dc.subject.otherSintering
dc.subject.otherThin films
dc.subject.otherYttria stabilized zirconia
dc.subject.otherZinc oxide
dc.subject.otherZirconia
dc.subject.otherSemiconductor doping
dc.titleProton conductivity of Y-doped BaZrO3: Pellets and thin films
dc.typeArticle
dspace.entity.typePublication
swu.datasource.scopushttps://www.scopus.com/inward/record.uri?eid=2-s2.0-79959723716&doi=10.1016%2fj.solidstatesciences.2011.04.015&partnerID=40&md5=271450dd2def248119f4baef10f93291

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