Publication:
Proton conductivity of Y-doped BaZrO3: Pellets and thin films

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Issued Date

2011

Resource Type

Article

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application/pdf

ISSN

12932558

DOI

10.1016/j.solidstatesciences.2011.04.015

Other identifier(s)

2-s2.0-79959723716

Rights Holder(s)

Scopus

Bibliographic Citation

Solid State Sciences. Vol 13, No.7 (2011), p.1429-1437

Suggested Citation

Pornprasertsuk R., Kosasang O., Somroop K., Horprathum M., Limnonthakul P., Chindaudom P., Jinawath S. Proton conductivity of Y-doped BaZrO3: Pellets and thin films. Solid State Sciences. Vol 13, No.7 (2011), p.1429-1437. doi:10.1016/j.solidstatesciences.2011.04.015 Retrieved from: https://hdl.handle.net/20.500.14740/7296

Title

Proton conductivity of Y-doped BaZrO3: Pellets and thin films

Author(s)

Pornprasertsuk R.
 Kosasang O.
 Somroop K.
 Horprathum M.
 Limnonthakul P.
 Chindaudom P.
 Jinawath S.

Abstract

Y-doped BaZrO3 (BYZ) pellets and thin films at various doping concentrations were fabricated by the cold isostatic press and 2-step sputtering techniques, respectively. By using BaCO3, 3 mol% yttria stabilized zirconia (YSZ), nano-Y2O3 powders and 1 wt% ZnO as a sintering aid, 6-40 at% BYZ pellets with no second phase and relative bulk density higher than 97% can be achieved. The highest bulk and grain boundary proton conductivities of the BYZ pellets measured by the electrochemical impedance spectroscopy (EIS) technique were obtained at 10 and 20 at% BYZ, respectively. Due to the absence of the second phase and higher bulk density, our BYZ (1 wt% ZnO) pellets show higher bulk and grain boundary conductivity than several previously reported ZnO-BYZ results. The 2-step sputtering technique for BYZ film fabrication involved two sequential steps as followed: (i) DC sputtered Y onto BaZrO3 target and (ii) RF sputtered Y-BaZrO3 target onto SiO2/Si substrate. EIS results of BYZ thin films also verify the dependence of conductivity on the Y doping concentration and reveal 102-103 times higher conductivities than those of BYZ pellets even with some YSZ phase present. The high conductivity may arise from several factors such as the surface conduction, low contamination and change of grain boundary structure. Two ionic conduction mechanisms were observed in the thin films (in air): (i) the proton conduction at T ≤ 450 °C and (ii) the oxide ion conduction at T > 450 °C. However, under humidified H2 atmosphere, the proton conduction was dominant througout the temperature range of this study. © 2011 Elsevier Masson SAS. All rights reserved.

Subject(s)

Bulk density
 Cold isostatic press
 Conduction Mechanism
 Doping concentration
 Film fabrication
 Grain boundary conductivity
 Grain boundary structure
 High conductivity
 Impedance spectroscopy
 Oxide ion conduction
 Phase present
 Proton conduction
 Relative bulk density
 Second phase
 Sintering Aid
 Sputtering techniques
 Surface conduction
 Temperature range
 Througout
 Y-doped
 Y-Doping
 ZnO
 Barium
 Barium zirconate
 Electric properties
 Electrochemical corrosion
 Electrochemical impedance spectroscopy
 Grain boundaries
 Grain size and shape
 Pelletizing
 Proton conductivity
 Protons
 Semiconducting silicon compounds
 Sintering
 Thin films
 Yttria stabilized zirconia
 Zinc oxide
 Zirconia
 Semiconductor doping

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URI

https://hdl.handle.net/20.500.14740/7296

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Scopus: Year 1983-2021

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