Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/12353
ชื่อเรื่อง: The study of the number of free electron bandfilling effect at different flying-height in TEAMR
ผู้แต่ง: Aksornniem S.
Keywords: Electric potential
Hard disk storage
Magnetic anisotropy
Magnetic recording
Magnetism
Permittivity
Anisotropy energies
Band filling effects
Band fillings
Flying heights
Hard disk drives
Relative permittivity
Trapping electrons
Writing process
Electrons
วันที่เผยแพร่: 2019
บทคัดย่อ: Trapping electron-assisted magnetic recording (TEAMR) is one writing method of hard disk drive (HDD) that reduces the anisotropy energy of magnetic recording layer before writing process. This paper studied the number of free electrons bandfilling at different the flying-height (FH), the relative permittivity of over coat,and electric potential at writer pole by using 3D models simulator. The results indicate that the number of free electrons bandfilling in with 2 nm of flying-height is lower 38 times than without flying-height condition. The relative permittivity of over coat increment is not sufficient to reduce anisotropy energy of L10 ordered FePt. In the last study, the results show that the number of free electrons bandfilling increases slightly while the electric potential at the writer pole increases. In with flying-height case of TEAMR, the number of free electrons per unit cell is very low that cannot affect to reduce media coercivity of L10 ordered FePt. © 2019 IEEE.
URI: https://ir.swu.ac.th/jspui/handle/123456789/12353
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078859122&doi=10.1109%2fECTI-CON47248.2019.8955184&partnerID=40&md5=34be7a3e9563d9d7e75e566163f78bb7
Appears in Collections:Scopus 1983-2021

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