Publication: Ion Implantation of Gemstones in Thailand and Our Reflections
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Issued Date
2018
Resource Type
File Type
application/pdf
Other identifier(s)
2-s2.0-85071908940
Rights Holder(s)
มหาวิทยาลัยศรีนครินทรวิโรฒ
Bibliographic Citation
Proceedings of the International Conference on Ion Implantation Technology. Vol 2018-September, (2018), p.381-384
Suggested Citation
Intarasiri S., Bootkul D., Tippawan U., Yu L.D. Ion Implantation of Gemstones in Thailand and Our Reflections. Proceedings of the International Conference on Ion Implantation Technology. Vol 2018-September, (2018), p.381-384. doi:10.1109/IIT.2018.8807897 Retrieved from: https://hdl.handle.net/20.500.14740/5876
Author(s)
Abstract
Ion implantation of gemstones for gemological modification is a new development of ion beam technology applications in materials science. At Chiang Mai University, ion implantation of gemstones has been emphatically carried out with using ion species such as nitrogen and oxygen at the ion energy in a range of 20 to 120 keV to the ion beam fluences in a range of 1017 to 1019 ions/cm2. After ion implantation treatments, the gemological properties and thus qualities of gemstones were found improved in various degrees, such as changes in colors and tones, enhancements in transmittance, glittering and brilliance, homogenization of color distribution, and removal of inclusions and flaws. The ion-beam-treated gemstones were judged by gemologist professionals to confirm promotions of the gem grades. Ion implantation has advantages over conventional HTs, such as fast treatment, low temperature, and localized modification. Our work has been cited and commented by GIA (Gemology Institute of America) in their recent review. Although there have been impressive achievements, there is a commonly recognized puzzle in ion implantation induced color changes of gemstone, that is the ion range puzzle. The ion range is short; however, the gemological modification induced seems of bulk. Mechanisms involved in the color modifications are not yet well revealed and understood and they only remain in speculation. Ion beam parameters seem influential to the effects. Further research issues are proposed accordingly. © 2018 IEEE.