Publication: Two-dimensional electron transport in MgZnO/ZnO heterostructures: Role of interface roughness
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Issued Date
2011
Resource Type
File Type
application/pdf
ISSN
223727
Other identifier(s)
2-s2.0-80051484072
Rights Holder(s)
มหาวิทยาลัยศรีนครินทรวิโรฒ
Bibliographic Citation
Journal of Physics D: Applied Physics. Vol 44, No.32 (2011), p.-
Suggested Citation
Thongnum A., Sa-Yakanit V., Pinsook U. Two-dimensional electron transport in MgZnO/ZnO heterostructures: Role of interface roughness. Journal of Physics D: Applied Physics. Vol 44, No.32 (2011), p.-. doi:10.1088/0022-3727/44/32/325109 Retrieved from: https://hdl.handle.net/20.500.14740/7262
Author(s)
Abstract
Mobility of two-dimensional electron gases in MgZnO/ZnO heterostructures with interface roughness effects was investigated theoretically using path-integral framework. We modelled the roughness-induced fluctuation by including two major effects, i.e. the electron and polarization-induced positive charge concentrations. We showed that both effects cause the scattering potential in the in-plane direction and hence affect the 2D mobility. In this work, we treated both electron and polarization-induced positive charge concentrations as equally important factors and then calculated the electron mobility and compared with the experimental result of Mg0.2Zn 0.8O/ZnO heterostructure at high-electron concentrations. We found that the fitting parameters Δ = 0.26 nm, Λ = 2.5 nm gave good description to the mobility data. We also showed that neglecting the polarization-induced positive charge concentration led to overestimating the 2D mobility. © 2011 IOP Publishing Ltd.