Publication:
Room temperature preparation of δ-phase CsSn1−xPbxI3 films for hole–transport in solid-state dye-sensitized solar cells

dc.contributor.authorArdchongtong P.
dc.contributor.authorKumlangwan P.
dc.contributor.authorTowannang M.
dc.contributor.authorSuksangrat P.
dc.contributor.authorSrepusharawoot P.
dc.contributor.authorPrachumrak N.
dc.contributor.authorKlangtakai P.
dc.contributor.authorPimanpang S.
dc.contributor.authorPromarak V.
dc.contributor.authorAmornkitbamrung V.
dc.date.accessioned2021-04-05T03:23:53Z
dc.date.available2021-04-05T03:23:53Z
dc.date.issued2018
dc.date.issuedBE2561
dc.description.abstractCsSn1−xPbxI3 films were prepared from mixed CsI, SnI2 and/or PbI2 solutions at five different Pb/Sn ratios (x = 0, 0.2, 0.5, 0.8 and 1) at room temperature. The color of the CsSn1−xPbxI3 films varied with their Pb/Sn ratios. At a Pb/Sn ratio of 0.5, CsSn0.5Pb0.5I3 had the darkest color, whereas films at other Pb/Sn ratios displayed dark brown or yellowish colors. The XRD spectra of the as-prepared CsSn1−xPbxI3 films matched the δ-phase (yellow-phase) nonperovskite structure quite well. Solid-state dye-sensitized solar cells (S-DSSCs) were assembled by directly dropping the mixed CsI, SnI2 and/or PbI2 solution onto TiO2-coated-dye electrodes and drying them at room temperature. A CsSn0.5Pb0.5I3 based S-DSSC generated the highest efficiency (3.47%) of the five conditions (CsSn1−xPbxI3, x = 0, 0.2, 0.5, 0.8 and 1). This is attributed to the dark color and good continuity of the CsSn0.5Pb0.5I3 film, its high shunt-resistance (10,377.10 Ω) and high incident-photon collecting efficiency of CsSn0.5Pb0.5I3 based S-DSSCs. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.
dc.format.mimetypeapplication/pdf
dc.identifier.citationJournal of Materials Science: Materials in Electronics. Vol 29, No.9 (2018), p.7811-7819
dc.identifier.doi10.1007/s10854-018-8780-2
dc.identifier.issn9574522
dc.identifier.other2-s2.0-85042237622
dc.identifier.urihttps://hdl.handle.net/20.500.14740/5386
dc.rights.holderมหาวิทยาลัยศรีนครินทรวิโรฒ
dc.subject.otherCesium iodide
dc.subject.otherCollector efficiency
dc.subject.otherColor
dc.subject.otherDye-sensitized solar cells
dc.subject.otherEfficiency
dc.subject.otherFilm preparation
dc.subject.otherLayered semiconductors
dc.subject.otherLead
dc.subject.otherLead compounds
dc.subject.otherSolar cells
dc.subject.otherTitanium dioxide
dc.subject.otherCollecting efficiency
dc.subject.otherDark colors
dc.subject.otherDelta-phase
dc.subject.otherGood continuity
dc.subject.otherRoom temperature preparation
dc.subject.otherShunt resistances
dc.subject.otherSolid-state dye-sensitized solar cells
dc.subject.otherXRD spectra
dc.subject.otherTin compounds
dc.titleRoom temperature preparation of δ-phase CsSn1−xPbxI3 films for hole–transport in solid-state dye-sensitized solar cells
dc.typeArticle
dspace.entity.typePublication
swu.datasource.scopushttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85042237622&doi=10.1007%2fs10854-018-8780-2&partnerID=40&md5=2e1ffb5aa2b9e2736822116c5479074c

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