Publication:
Effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering

2
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Issued Date

2011

Resource Type

Conference Paper

File Type

application/pdf

ISSN

406090

DOI

10.1016/j.tsf.2011.06.079

Other identifier(s)

2-s2.0-80755175357

Rights Holder(s)

มหาวิทยาลัยศรีนครินทรวิโรฒ

Bibliographic Citation

Thin Solid Films. Vol 520, No.2 (2011), p.726-729

Suggested Citation

Tohsophon T., Wattanasupinyo N., Silskulsuk B., Sirikulrat N. Effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering. Thin Solid Films. Vol 520, No.2 (2011), p.726-729. doi:10.1016/j.tsf.2011.06.079 Retrieved from: https://hdl.handle.net/20.500.14740/7222

Title

Effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering

Author(s)

Tohsophon T.
 Wattanasupinyo N.
 Silskulsuk B.
 Sirikulrat N.

Abstract

Aluminum and indium co-doped zinc oxide (AIZO) thin films were prepared by direct current (dc) magnetron sputtering on glass substrate in pure argon atmosphere. Three inches of zinc oxide ceramic with 0.5 wt.% of aluminum and indium doping was used as a target in static mode. The influence of sputtering conditions i.e. substrate-target distance, pressure and power on AIZO films was studied. The electrical resistivity and microstructure of thin films were investigated by the four point probe technique and the scanning electron microscope, respectively. The optical transmittance of AIZO films was measured by UV visible spectrophotometer in the wavelength of 300-1100 nm. Depending on the deposited conditions, highly transparent films up to 80% with low resistivities in the range of 2.6-7.9 × 10- 4 Ω cm were achieved at room temperature. Possible mechanism in the processing which, ultimately, determines the physical properties of AIZO films will be discussed. © 2011 Elsevier B.V. All rights reserved.

Subject(s)

Argon atmospheres
 Ceramic target
 Co-doped
 Co-doping
 Dc magnetron sputtering
 Direct current magnetron sputtering
 Electrical resistivity
 Four-point probe techniques
 Glass substrates
 Indium doping
 Low resistivity
 Oxide ceramics
 Room temperature
 Scanning Electron Microscope
 Sputtering conditions
 Substrate-target distances
 TCO films
 Transparent films
 UV-visible spectrophotometer
 Aluminum
 Ceramic materials
 DC power transmission
 Electric conductivity
 Film preparation
 Indium
 Magnetron sputtering
 Scanning electron microscopy
 Semiconductor doping
 Substrates
 Thin films
 Zinc
 Zinc oxide
 Oxide films

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URI

https://hdl.handle.net/20.500.14740/7222

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Scopus: Year 1983-2021

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