High-efficiency dual-band switched beam antenna with back lobe suppression using parasitic elements and patch etching for 5G

Abstract

This paper presents the design and development of an innovative single-element, dual-band beam-switching antenna with back lobe suppression, tailored for 5G applications. The proposed antenna integrates parasitic elements and patch etching techniques to enhance performance while maintaining a compact and cost-efficient design. Operating effectively at 0.7 GHz and 2.6 GHz, the antenna features a square patch of 111.84 mm × 111.84 mm and a ground plane of 143.84 mm × 143.84 mm, optimized for dual-band performance. The design employs advanced techniques such as back lobe suppression, patch etching, and strategically placed short circuits, resulting in significant improvements in signal clarity and interference reduction. Simulations and measurement results confirm the antenna’s ability to change its beam direction, allowing it to transition between 45°, 135°, 225°, and 315° angles. This enhances signal clarity, reduces interference, and boosts overall network reliability in dense urban environments. The results demonstrate outstanding beam-switching capabilities, with gains of 5.39 dBi at 0.7 GHz and 8.35 dBi at 2.6 GHz. This approach provides a robust solution for improving the coverage and reliability of 5G networks in extremely dense urban areas. This study offers valuable insights into antenna designs for future wireless technologies, providing a practical and cost-efficient solution with exceptional performance and seamless integration into existing systems.