Publication: The study of the number of free electron bandfilling effect at different flying-height in TEAMR
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Issued Date
2019
Resource Type
File Type
application/pdf
Other identifier(s)
2-s2.0-85078859122
Rights Holder(s)
Scopus
Bibliographic Citation
Proceedings of the 16th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2019. (2019), p.61-64
Suggested Citation
Aksornniem S. The study of the number of free electron bandfilling effect at different flying-height in TEAMR. Proceedings of the 16th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2019. (2019), p.61-64. doi:10.1109/ECTI-CON47248.2019.8955184 Retrieved from: https://hdl.handle.net/20.500.14740/5239
Author(s)
Abstract
Trapping electron-assisted magnetic recording (TEAMR) is one writing method of hard disk drive (HDD) that reduces the anisotropy energy of magnetic recording layer before writing process. This paper studied the number of free electrons bandfilling at different the flying-height (FH), the relative permittivity of over coat,and electric potential at writer pole by using 3D models simulator. The results indicate that the number of free electrons bandfilling in with 2 nm of flying-height is lower 38 times than without flying-height condition. The relative permittivity of over coat increment is not sufficient to reduce anisotropy energy of L10 ordered FePt. In the last study, the results show that the number of free electrons bandfilling increases slightly while the electric potential at the writer pole increases. In with flying-height case of TEAMR, the number of free electrons per unit cell is very low that cannot affect to reduce media coercivity of L10 ordered FePt. © 2019 IEEE.