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Description of low temperature bandtail states in two-dimensional semiconductors using path integral approach

dc.contributor.authorPinsook U.
dc.contributor.authorThongnum A.
dc.contributor.authorSa-Yakanit V.
dc.date.accessioned2021-04-05T03:33:08Z
dc.date.available2021-04-05T03:33:08Z
dc.date.issued2013
dc.date.issuedBE2556
dc.description.abstractWe used the solutions from the variational path integral to suggest a function form of the bandtail states of a two-dimensional system. The analytic solutions provide two regimes, i.e., the ground state (low temperature) and the semiclassical (high temperature) limits. We used the theoretical results to describe the results of the bandtail states in Si/SiO2 heterostructure reported recently (Jock, Appl. Phys. Lett. 100, 023503 (2012)). The low-temperature bandtail provided good agreement to the experimental results (sample B) with the parameters of Δ 0.225 nm, L 3.55 nm, and a 5 nm. © 2013 AIP Publishing LLC.
dc.format.mimetypeapplication/pdf
dc.identifier.citationApplied Physics Letters. Vol 102, No.16 (2013), p.-
dc.identifier.doi10.1063/1.4802721
dc.identifier.issn36951
dc.identifier.other2-s2.0-84876976542
dc.identifier.urihttps://hdl.handle.net/20.500.14740/6675
dc.rights.holderScopus
dc.subject.otherAnalytic solution
dc.subject.otherBand-tail state
dc.subject.otherHigh temperature
dc.subject.otherLow temperatures
dc.subject.otherPath integral approach
dc.subject.otherTheoretical result
dc.subject.otherTwo-dimensional semiconductors
dc.subject.otherTwo-dimensional systems
dc.subject.otherQuantum theory
dc.subject.otherTemperature
dc.subject.otherTwo dimensional
dc.subject.otherCarrier concentration
dc.titleDescription of low temperature bandtail states in two-dimensional semiconductors using path integral approach
dc.typeArticle
dspace.entity.typePublication
swu.datasource.scopushttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84876976542&doi=10.1063%2f1.4802721&partnerID=40&md5=5a4a8f228957e6694437d025e440d432

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