Publication:
Formation of thin DLC films on SiO2/Si substrate using FCVAD technique

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Issued Date

2013

Resource Type

Article

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application/pdf

ISSN

0168583X

DOI

10.1016/j.nimb.2013.02.037

Other identifier(s)

2-s2.0-84885191214

Rights Holder(s)

Scopus

Bibliographic Citation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. Vol 307, No. (2013), p.147-153

Suggested Citation

Bootkul D., Intarasiri S., Aramwit C., Tippawan U., Yu L.D. Formation of thin DLC films on SiO2/Si substrate using FCVAD technique. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. Vol 307, No. (2013), p.147-153. doi:10.1016/j.nimb.2013.02.037 Retrieved from: https://hdl.handle.net/20.500.14740/6800

Title

Formation of thin DLC films on SiO2/Si substrate using FCVAD technique

Author(s)

Bootkul D.
 Intarasiri S.
 Aramwit C.
 Tippawan U.
 Yu L.D.

Abstract

Diamond-like carbon (DLC) films deposited on SiO2/Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO 2/Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V,-250 V and-450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10-50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely ID/IG ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the ID/IG ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp3 site should be maximized at the arc voltage-450 V for fixed bias voltage. It is expected that, at-450 V bias and 450 V arc, sp3 fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO2 substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC film showed changes in the edge shape, indicating a gradual change in its properties between the edges and the core. © 2013 Elsevier B.V. All rights reserved.

Subject(s)

Amorphous films
 Carbon films
 Chemical bonds
 Deposition
 Diamond like carbon films
 Diamonds
 Electron energy levels
 Electron energy loss spectroscopy
 Electron microscopy
 Electron scattering
 Energy dissipation
 High resolution transmission electron microscopy
 Inert gas welding
 Raman spectroscopy
 Transmission electron microscopy
 Vacuum applications
 Vacuum technology
 Characterization of the films
 Cross sectional analysis
 Deposition conditions
 Diamond like carbon
 Filtered cathodic vacuum arc deposition
 Nano-coatings
 Selective chemical sensors
 Bias voltage

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URI

https://hdl.handle.net/20.500.14740/6800

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Scopus: Year 1983-2021

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