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Electron transport properties in m-plane and c-plane AlN/GaN heterostructures with interface roughness and anisotropic in-plane strain scatterings

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Thongnum A., Pinsook U. Electron transport properties in m-plane and c-plane AlN/GaN heterostructures with interface roughness and anisotropic in-plane strain scatterings. Journal of Physics D: Applied Physics. Vol 48, No.8 (2015). doi:10.1088/0022-3727/48/8/085301 Retrieved from: https://hdl.handle.net/20.500.14740/6159

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