Publication: Interface roughness effect on density of states and mobility of narrow Si/Si1-xGex quantum wells: Path-integral approach
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Issued Date
2009
Resource Type
File Type
application/pdf
ISSN
223727
Other identifier(s)
2-s2.0-70350633295
Rights Holder(s)
Scopus
Bibliographic Citation
Journal of Physics D: Applied Physics. Vol 42, No.19 (2009), p.-
Suggested Citation
Thongnum A., Pinsook U., Sa-Yakanit V. Interface roughness effect on density of states and mobility of narrow Si/Si1-xGex quantum wells: Path-integral approach. Journal of Physics D: Applied Physics. Vol 42, No.19 (2009), p.-. doi:10.1088/0022-3727/42/19/195101 Retrieved from: https://hdl.handle.net/20.500.14740/3836
Author(s)
Abstract
The in-plane transport of a two-dimensional hole gas in narrow Si/Si 1-xGex quantum wells (QWs) with the interface roughness effect was investigated using path-integral theory. The random variation of the well width causes the fluctuation potential in the in-plane direction. This fluctuation was integrated into the path integral via the eigenvalue model of the infinite barrier height QW. The hole mobility and the density of states can be derived in an analytic form. The calculated hole mobility was compared with the experimental data and a different theoretical approach based on the wavefunction model. We found that Δ = 0.2 nm and Λ = 4.5 nm give a good description of the experimental data. Our theory predicted the existence of the localized states, which reduces the hole mobility in addition to the prediction from the wavefunction method. © 2009 IOP Publishing Ltd.
Subject(s)
Density of state
Eigen-value
Experimental data
In-plane
In-plane direction
Infinite barriers
Interface roughness
Localized state
Path integral
Path-integral theory
Quantum well
Random variation
Theoretical approach
Two-dimensional hole gas
Wave function method
Well width
Eigenvalues and eigenfunctions
Germanium
Molecular vibrations
Semiconductor quantum wells
Hole mobility
Eigen-value
Experimental data
In-plane
In-plane direction
Infinite barriers
Interface roughness
Localized state
Path integral
Path-integral theory
Quantum well
Random variation
Theoretical approach
Two-dimensional hole gas
Wave function method
Well width
Eigenvalues and eigenfunctions
Germanium
Molecular vibrations
Semiconductor quantum wells
Hole mobility