Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/14165
Title: Formation of thin DLC films on SiO2/Si substrate using FCVAD technique
Authors: Bootkul D.
Intarasiri S.
Aramwit C.
Tippawan U.
Yu L.D.
Keywords: Amorphous films
Carbon films
Chemical bonds
Deposition
Diamond like carbon films
Diamonds
Electron energy levels
Electron energy loss spectroscopy
Electron microscopy
Electron scattering
Energy dissipation
High resolution transmission electron microscopy
Inert gas welding
Raman spectroscopy
Transmission electron microscopy
Vacuum applications
Vacuum technology
Characterization of the films
Cross sectional analysis
Deposition conditions
Diamond like carbon
Filtered cathodic vacuum arc deposition
Nano-coatings
Selective chemical sensors
Bias voltage
Issue Date: 2013
Abstract: Diamond-like carbon (DLC) films deposited on SiO2/Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO 2/Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V,-250 V and-450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10-50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely ID/IG ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the ID/IG ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp3 site should be maximized at the arc voltage-450 V for fixed bias voltage. It is expected that, at-450 V bias and 450 V arc, sp3 fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO2 substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC film showed changes in the edge shape, indicating a gradual change in its properties between the edges and the core. © 2013 Elsevier B.V. All rights reserved.
URI: https://ir.swu.ac.th/jspui/handle/123456789/14165
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84885191214&doi=10.1016%2fj.nimb.2013.02.037&partnerID=40&md5=d938f006528e7a7de4fe6c092606c3c9
ISSN: 0168583X
Appears in Collections:Scopus 1983-2021

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