Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/13900
Title: Effects of filtered cathodic vacuum arc deposition (FCVAD) conditions on photovoltaic TiO 2 films
Authors: Aramwit C.
Intarasiri S.
Bootkul D.
Tippawan U.
Supsermpol B.
Seanphinit N.
Ruangkul W.
Yu L.D.
Keywords: Atomic force microscopy
Deposition
Energy dispersive spectroscopy
Films
Oxide minerals
Oxygen
Photovoltaic effects
Scanning electron microscopy
Vacuum applications
Vacuum technology
As-deposited films
Deposition conditions
Deposition time
Energy dispersive X ray spectroscopy
Film transparency
Filtered cathodic vacuum arc deposition
Photovoltaic applications
Titanium dioxides (TiO2)
Titanium dioxide
Issue Date: 2014
Abstract: Titanium dioxide (TiO 2 ) films for photovoltaic applications were synthesized using filtered cathodic vacuum arc deposition (FCVAD) technique. Various deposition conditions were tested for an optimal film formation. The conditions included the oxygen (O 2 ) pressure which was varied from a base pressure 10 -5 to 10 -4 , 10 -3 , 10 -2 and 10 -1 Torr, sample holder bias varied using 0 or -250 V, deposition time varied from 10, 20 to 30 min, and deposition distance varied from 1 to 3 cm. The deposited films were also annealed and compared with unannealed ones. The films under various conditions were characterized using optical microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDS) and Raman spectroscopy techniques. The film transparency increased and thickness decreased to a nanoscale with increasing of the O 2 pressure. The transparent deposited films contained stoichiometric titanium and oxygen under the medium O 2 pressure. The as-deposited films were TiO 2 containing some rutile but no anatase which needed annealing to form. © 2014 Elsevier B.V.
URI: https://ir.swu.ac.th/jspui/handle/123456789/13900
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84903309650&doi=10.1016%2fj.apsusc.2014.01.097&partnerID=40&md5=d5572d96a486e44ece2ee418700e6980
ISSN: 1694332
Appears in Collections:Scopus 1983-2021

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