Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/15024
Title: Texture development in Ti-Si-N nanocomposite thin films
Authors: Chandra R.
Kaur D.
Chawla A.K.
Phinichka N.
Barber Z.H.
Keywords: Atomic force microscopy
Crystal microstructure
Deposition
Indentation
Mechanical properties
Morphology
Sputtering
Surfaces
Textures
Thin films
Titanium compounds
X ray diffraction analysis
Growth morphology
Nanoindentation
Sapphire substrates
Titanium silicon nitride
Nanostructured materials
Atomic force microscopy
Crystal microstructure
Deposition
Indentation
Mechanical properties
Morphology
Nanostructured materials
Sputtering
Surfaces
Textures
Thin films
Titanium compounds
X ray diffraction analysis
Issue Date: 2006
Abstract: Nanocomposite thin films of titanium silicon nitride were deposited by sputtering on R-plane sapphire substrates. The effects of silicon addition and negative substrate bias on the texture development of the films were studied systematically by varying the bias voltage in the range -20 to -200 V. The accompanying changes in the microstructure and growth morphology of the phases in these films were investigated in detail using X-ray diffraction and a atomic force microscopy. In addition, the effect of texture on the mechanical properties of the films was also investigated using nanoindentation technique. Pure TiN films deposited without Si exhibit a strong (1 1 1) preferred orientation, while with addition of Si, the orientation of the films changes from (1 1 1) to (2 0 0). Meanwhile the surface morphology of these films changed from a pronounced columnar microstructure to a dense, fine-grained structure. The effect of negative substrate bias voltage applied during deposition also resulted in a similar change of film orientation and microstructure and leads to the increase in hardness of the films from 21 to 40 GPa, respectively. © 2006 Elsevier B.V. All rights reserved.
URI: https://ir.swu.ac.th/jspui/handle/123456789/15024
https://www.scopus.com/inward/record.uri?eid=2-s2.0-33748176481&doi=10.1016%2fj.msea.2005.09.132&partnerID=40&md5=07a06926285976a70aafe03e7fc7cd32
ISSN: 9215093
Appears in Collections:Scopus 1983-2021

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