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dc.contributor.authorThongnum A.
dc.contributor.authorPinsook U.
dc.contributor.authorSa-Yakanit V.
dc.date.accessioned2021-04-05T04:31:57Z-
dc.date.available2021-04-05T04:31:57Z-
dc.date.issued2009
dc.identifier.issn223727
dc.identifier.other2-s2.0-70350633295
dc.identifier.urihttps://ir.swu.ac.th/jspui/handle/123456789/14821-
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-70350633295&doi=10.1088%2f0022-3727%2f42%2f19%2f195101&partnerID=40&md5=f306b78cda8eabf610674623a3cc5ef8
dc.description.abstractThe in-plane transport of a two-dimensional hole gas in narrow Si/Si 1-xGex quantum wells (QWs) with the interface roughness effect was investigated using path-integral theory. The random variation of the well width causes the fluctuation potential in the in-plane direction. This fluctuation was integrated into the path integral via the eigenvalue model of the infinite barrier height QW. The hole mobility and the density of states can be derived in an analytic form. The calculated hole mobility was compared with the experimental data and a different theoretical approach based on the wavefunction model. We found that Δ = 0.2 nm and Λ = 4.5 nm give a good description of the experimental data. Our theory predicted the existence of the localized states, which reduces the hole mobility in addition to the prediction from the wavefunction method. © 2009 IOP Publishing Ltd.
dc.subjectDensity of state
dc.subjectEigen-value
dc.subjectExperimental data
dc.subjectIn-plane
dc.subjectIn-plane direction
dc.subjectInfinite barriers
dc.subjectInterface roughness
dc.subjectLocalized state
dc.subjectPath integral
dc.subjectPath-integral theory
dc.subjectQuantum well
dc.subjectRandom variation
dc.subjectTheoretical approach
dc.subjectTwo-dimensional hole gas
dc.subjectWave function method
dc.subjectWell width
dc.subjectEigenvalues and eigenfunctions
dc.subjectGermanium
dc.subjectMolecular vibrations
dc.subjectSemiconductor quantum wells
dc.subjectHole mobility
dc.titleInterface roughness effect on density of states and mobility of narrow Si/Si1-xGex quantum wells: Path-integral approach
dc.typeArticle
dc.rights.holderScopus
dc.identifier.bibliograpycitationJournal of Physics D: Applied Physics. Vol 42, No.19 (2009), p.-
dc.identifier.doi10.1088/0022-3727/42/19/195101
Appears in Collections:Scopus 1983-2021

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