Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/14821
ชื่อเรื่อง: Interface roughness effect on density of states and mobility of narrow Si/Si1-xGex quantum wells: Path-integral approach
ผู้แต่ง: Thongnum A.
Pinsook U.
Sa-Yakanit V.
Keywords: Density of state
Eigen-value
Experimental data
In-plane
In-plane direction
Infinite barriers
Interface roughness
Localized state
Path integral
Path-integral theory
Quantum well
Random variation
Theoretical approach
Two-dimensional hole gas
Wave function method
Well width
Eigenvalues and eigenfunctions
Germanium
Molecular vibrations
Semiconductor quantum wells
Hole mobility
วันที่เผยแพร่: 2009
บทคัดย่อ: The in-plane transport of a two-dimensional hole gas in narrow Si/Si 1-xGex quantum wells (QWs) with the interface roughness effect was investigated using path-integral theory. The random variation of the well width causes the fluctuation potential in the in-plane direction. This fluctuation was integrated into the path integral via the eigenvalue model of the infinite barrier height QW. The hole mobility and the density of states can be derived in an analytic form. The calculated hole mobility was compared with the experimental data and a different theoretical approach based on the wavefunction model. We found that Δ = 0.2 nm and Λ = 4.5 nm give a good description of the experimental data. Our theory predicted the existence of the localized states, which reduces the hole mobility in addition to the prediction from the wavefunction method. © 2009 IOP Publishing Ltd.
URI: https://ir.swu.ac.th/jspui/handle/123456789/14821
https://www.scopus.com/inward/record.uri?eid=2-s2.0-70350633295&doi=10.1088%2f0022-3727%2f42%2f19%2f195101&partnerID=40&md5=f306b78cda8eabf610674623a3cc5ef8
ISSN: 223727
Appears in Collections:Scopus 1983-2021

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