Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/14503
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dc.contributor.authorPornprasertsuk R.
dc.contributor.authorKosasang O.
dc.contributor.authorSomroop K.
dc.contributor.authorHorprathum M.
dc.contributor.authorLimnonthakul P.
dc.contributor.authorChindaudom P.
dc.contributor.authorJinawath S.
dc.date.accessioned2021-04-05T03:35:13Z-
dc.date.available2021-04-05T03:35:13Z-
dc.date.issued2011
dc.identifier.issn12932558
dc.identifier.other2-s2.0-79959723716
dc.identifier.urihttps://ir.swu.ac.th/jspui/handle/123456789/14503-
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-79959723716&doi=10.1016%2fj.solidstatesciences.2011.04.015&partnerID=40&md5=271450dd2def248119f4baef10f93291
dc.description.abstractY-doped BaZrO3 (BYZ) pellets and thin films at various doping concentrations were fabricated by the cold isostatic press and 2-step sputtering techniques, respectively. By using BaCO3, 3 mol% yttria stabilized zirconia (YSZ), nano-Y2O3 powders and 1 wt% ZnO as a sintering aid, 6-40 at% BYZ pellets with no second phase and relative bulk density higher than 97% can be achieved. The highest bulk and grain boundary proton conductivities of the BYZ pellets measured by the electrochemical impedance spectroscopy (EIS) technique were obtained at 10 and 20 at% BYZ, respectively. Due to the absence of the second phase and higher bulk density, our BYZ (1 wt% ZnO) pellets show higher bulk and grain boundary conductivity than several previously reported ZnO-BYZ results. The 2-step sputtering technique for BYZ film fabrication involved two sequential steps as followed: (i) DC sputtered Y onto BaZrO3 target and (ii) RF sputtered Y-BaZrO3 target onto SiO2/Si substrate. EIS results of BYZ thin films also verify the dependence of conductivity on the Y doping concentration and reveal 102-103 times higher conductivities than those of BYZ pellets even with some YSZ phase present. The high conductivity may arise from several factors such as the surface conduction, low contamination and change of grain boundary structure. Two ionic conduction mechanisms were observed in the thin films (in air): (i) the proton conduction at T ≤ 450 °C and (ii) the oxide ion conduction at T > 450 °C. However, under humidified H2 atmosphere, the proton conduction was dominant througout the temperature range of this study. © 2011 Elsevier Masson SAS. All rights reserved.
dc.subjectBulk density
dc.subjectCold isostatic press
dc.subjectConduction Mechanism
dc.subjectDoping concentration
dc.subjectFilm fabrication
dc.subjectGrain boundary conductivity
dc.subjectGrain boundary structure
dc.subjectHigh conductivity
dc.subjectImpedance spectroscopy
dc.subjectOxide ion conduction
dc.subjectPhase present
dc.subjectProton conduction
dc.subjectRelative bulk density
dc.subjectSecond phase
dc.subjectSintering Aid
dc.subjectSputtering techniques
dc.subjectSurface conduction
dc.subjectTemperature range
dc.subjectThrougout
dc.subjectY-doped
dc.subjectY-Doping
dc.subjectZnO
dc.subjectBarium
dc.subjectBarium zirconate
dc.subjectElectric properties
dc.subjectElectrochemical corrosion
dc.subjectElectrochemical impedance spectroscopy
dc.subjectGrain boundaries
dc.subjectGrain size and shape
dc.subjectPelletizing
dc.subjectProton conductivity
dc.subjectProtons
dc.subjectSemiconducting silicon compounds
dc.subjectSintering
dc.subjectThin films
dc.subjectYttria stabilized zirconia
dc.subjectZinc oxide
dc.subjectZirconia
dc.subjectSemiconductor doping
dc.titleProton conductivity of Y-doped BaZrO3: Pellets and thin films
dc.typeArticle
dc.rights.holderScopus
dc.identifier.bibliograpycitationSolid State Sciences. Vol 13, No.7 (2011), p.1429-1437
dc.identifier.doi10.1016/j.solidstatesciences.2011.04.015
Appears in Collections:Scopus 1983-2021

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