Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/14457
ชื่อเรื่อง: Effect of aluminum and indium co-doping on zinc oxide films prepared by dc magnetron sputtering
ผู้แต่ง: Tohsophon T.
Wattanasupinyo N.
Silskulsuk B.
Sirikulrat N.
Keywords: Argon atmospheres
Ceramic target
Co-doped
Co-doping
Dc magnetron sputtering
Direct current magnetron sputtering
Electrical resistivity
Four-point probe techniques
Glass substrates
Indium doping
Low resistivity
Oxide ceramics
Room temperature
Scanning Electron Microscope
Sputtering conditions
Substrate-target distances
TCO films
Transparent films
UV-visible spectrophotometer
Aluminum
Ceramic materials
DC power transmission
Electric conductivity
Film preparation
Indium
Magnetron sputtering
Scanning electron microscopy
Semiconductor doping
Substrates
Thin films
Zinc
Zinc oxide
Oxide films
วันที่เผยแพร่: 2011
บทคัดย่อ: Aluminum and indium co-doped zinc oxide (AIZO) thin films were prepared by direct current (dc) magnetron sputtering on glass substrate in pure argon atmosphere. Three inches of zinc oxide ceramic with 0.5 wt.% of aluminum and indium doping was used as a target in static mode. The influence of sputtering conditions i.e. substrate-target distance, pressure and power on AIZO films was studied. The electrical resistivity and microstructure of thin films were investigated by the four point probe technique and the scanning electron microscope, respectively. The optical transmittance of AIZO films was measured by UV visible spectrophotometer in the wavelength of 300-1100 nm. Depending on the deposited conditions, highly transparent films up to 80% with low resistivities in the range of 2.6-7.9 × 10- 4 Ω cm were achieved at room temperature. Possible mechanism in the processing which, ultimately, determines the physical properties of AIZO films will be discussed. © 2011 Elsevier B.V. All rights reserved.
URI: https://ir.swu.ac.th/jspui/handle/123456789/14457
https://www.scopus.com/inward/record.uri?eid=2-s2.0-80755175357&doi=10.1016%2fj.tsf.2011.06.079&partnerID=40&md5=11eed2459db8518e714f9f78a1070811
ISSN: 406090
Appears in Collections:Scopus 1983-2021

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