Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/14080
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dc.contributor.authorPinsook U.
dc.contributor.authorThongnum A.
dc.contributor.authorSa-Yakanit V.
dc.date.accessioned2021-04-05T03:33:08Z-
dc.date.available2021-04-05T03:33:08Z-
dc.date.issued2013
dc.identifier.issn36951
dc.identifier.other2-s2.0-84876976542
dc.identifier.urihttps://ir.swu.ac.th/jspui/handle/123456789/14080-
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84876976542&doi=10.1063%2f1.4802721&partnerID=40&md5=5a4a8f228957e6694437d025e440d432
dc.description.abstractWe used the solutions from the variational path integral to suggest a function form of the bandtail states of a two-dimensional system. The analytic solutions provide two regimes, i.e., the ground state (low temperature) and the semiclassical (high temperature) limits. We used the theoretical results to describe the results of the bandtail states in Si/SiO2 heterostructure reported recently (Jock, Appl. Phys. Lett. 100, 023503 (2012)). The low-temperature bandtail provided good agreement to the experimental results (sample B) with the parameters of Δ 0.225 nm, L 3.55 nm, and a 5 nm. © 2013 AIP Publishing LLC.
dc.subjectAnalytic solution
dc.subjectBand-tail state
dc.subjectHigh temperature
dc.subjectLow temperatures
dc.subjectPath integral approach
dc.subjectTheoretical result
dc.subjectTwo-dimensional semiconductors
dc.subjectTwo-dimensional systems
dc.subjectQuantum theory
dc.subjectTemperature
dc.subjectTwo dimensional
dc.subjectCarrier concentration
dc.titleDescription of low temperature bandtail states in two-dimensional semiconductors using path integral approach
dc.typeArticle
dc.rights.holderScopus
dc.identifier.bibliograpycitationApplied Physics Letters. Vol 102, No.16 (2013), p.-
dc.identifier.doi10.1063/1.4802721
Appears in Collections:Scopus 1983-2021

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