Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/13524
Title: Influence of growth conditions on morphology of ZnO nanorods by low-temperature hydrothermal method
Authors: Pokai S.
Limnonthakul P.
Horprathum M.
Kalasung S.
Eiamchai P.
Limwichean S.
Nuntawong N.
Pattantsetakul V.
Tuscharoen S.
Kaewkhao J.
Keywords: Aspect ratio
Cost effectiveness
Enamels
Field emission microscopes
Gold compounds
Gold deposits
Morphology
Nanoelectronics
Nanorods
Scanning electron microscopy
Silicon wafers
Solar cells
Solar power generation
Temperature
X ray diffraction
Zinc oxide
Cost-effective methods
Field emission scanning electron microscopy
Growth conditions
Hydrothermal
Low-temperature hydrothermal methods
Precursor concentration
Preferred orientations
Silicon wafer substrates
II-VI semiconductors
Issue Date: 2016
Abstract: Zinc oxide (ZnO) nanorods (NRs) promise high potentials in several applications, such as photovoltaic device, thermoelectric device, sensor and solar cell. In this research, the vertical alignment of ZnO NRs was fabricated by hydrothermal method with various precursor concentrations and growth time on different seed layers (ZnO and Au), which deposited on silicon wafer substrate (100). The crystalline structure and morphology of ZnO NRs have been characterized by x-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) techniques, respectively. The x-ray diffraction pattern shows that the prepared samples have a strong preferred orientation (002) plane. FE-SEM images of the ZnO NRs, it found that the density and aspect ratio were strongly influenced by the seed layer and precursor concentration. In addition, the aspect ratio of ZnO NRs was increased with increasing growth time. This study provides a cost effective method for the fabrication of well aligned ZnO NRs for nano-electronic devices. © 2016 Trans Tech Publications, Switzerland.
URI: https://ir.swu.ac.th/jspui/handle/123456789/13524
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84958212317&doi=10.4028%2fwww.scientific.net%2fKEM.675-676.53&partnerID=40&md5=2a49f6894c1e590a9f91d2d3d988bcbd
ISSN: 10139826
Appears in Collections:Scopus 1983-2021

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