Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/13421
Title: Room temperature preparation of δ-phase CsSn1−xPbxI3 films for hole–transport in solid-state dye-sensitized solar cells
Authors: Ardchongtong P.
Kumlangwan P.
Towannang M.
Suksangrat P.
Srepusharawoot P.
Prachumrak N.
Klangtakai P.
Pimanpang S.
Promarak V.
Amornkitbamrung V.
Keywords: Cesium iodide
Collector efficiency
Color
Dye-sensitized solar cells
Efficiency
Film preparation
Layered semiconductors
Lead
Lead compounds
Solar cells
Titanium dioxide
Collecting efficiency
Dark colors
Delta-phase
Good continuity
Room temperature preparation
Shunt resistances
Solid-state dye-sensitized solar cells
XRD spectra
Tin compounds
Issue Date: 2018
Abstract: CsSn1−xPbxI3 films were prepared from mixed CsI, SnI2 and/or PbI2 solutions at five different Pb/Sn ratios (x = 0, 0.2, 0.5, 0.8 and 1) at room temperature. The color of the CsSn1−xPbxI3 films varied with their Pb/Sn ratios. At a Pb/Sn ratio of 0.5, CsSn0.5Pb0.5I3 had the darkest color, whereas films at other Pb/Sn ratios displayed dark brown or yellowish colors. The XRD spectra of the as-prepared CsSn1−xPbxI3 films matched the δ-phase (yellow-phase) nonperovskite structure quite well. Solid-state dye-sensitized solar cells (S-DSSCs) were assembled by directly dropping the mixed CsI, SnI2 and/or PbI2 solution onto TiO2-coated-dye electrodes and drying them at room temperature. A CsSn0.5Pb0.5I3 based S-DSSC generated the highest efficiency (3.47%) of the five conditions (CsSn1−xPbxI3, x = 0, 0.2, 0.5, 0.8 and 1). This is attributed to the dark color and good continuity of the CsSn0.5Pb0.5I3 film, its high shunt-resistance (10,377.10 Ω) and high incident-photon collecting efficiency of CsSn0.5Pb0.5I3 based S-DSSCs. © 2018, Springer Science+Business Media, LLC, part of Springer Nature.
URI: https://ir.swu.ac.th/jspui/handle/123456789/13421
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85042237622&doi=10.1007%2fs10854-018-8780-2&partnerID=40&md5=2e1ffb5aa2b9e2736822116c5479074c
ISSN: 9574522
Appears in Collections:Scopus 1983-2021

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