Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/13058
Title: DC microplasma jet for local a: C-H deposition operated in SEM chamber
Authors: Matra K.
Furuta H.
Hatta A.
Keywords: Electric discharges
Electrodes
Plasma jets
Scanning electron microscopy
Silicon wafers
Thin films
Deposition time
Direct pumping
Inlet pressures
Insulating film
Micro-plasma jet
Source voltage
Surface profilers
Thin-film depositions
Deposition
Issue Date: 2017
Abstract: A DC micro plasma jet for local micro deposition of a:C-H film in the ambient vacuum of scanning electron microscope (SEM) chamber is proposed. Acetylene (C2H2) gas was locally fed into the chamber through an orifice shaped gas nozzle (OGN) at 6.6 sccm in flow rate by applying 80 kPa-inlet pressure with an additional direct pumping system equipped on the SEM chamber. As a cathode, a cut of n-type silicon (Si) wafer was placed right in front of the OGN at 200 μm gap distance. By applying a positive DC voltage to the OGN, C2H2 plasma was generated locally between the electrodes. During discharge, the voltage increased and the current decreased due to deposition of insulating film on the Si wafer with resulting in automatic termination of discharge at the constant source voltage. A symmetric mountain-shaped a:C-H film of 5 μm height was deposited at the center by operation for 15 s. Films were deposited with variation of gas flow rate, gap distance, voltage and current, and deposition time. The films were directly observed by SEM and analyzed by surface profiler and by Raman spectroscopy. © 2017 by the authors.
URI: https://ir.swu.ac.th/jspui/handle/123456789/13058
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85021640391&doi=10.3390%2fmi8070211&partnerID=40&md5=caf3f60f2f6a53995a2d247287122dc9
ISSN: 2072666X
Appears in Collections:Scopus 1983-2021

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