Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/12931
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dc.contributor.authorMatra K.
dc.date.accessioned2021-04-05T03:21:50Z-
dc.date.available2021-04-05T03:21:50Z-
dc.date.issued2018
dc.identifier.issn214922
dc.identifier.other2-s2.0-85039997092
dc.identifier.urihttps://ir.swu.ac.th/jspui/handle/123456789/12931-
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85039997092&doi=10.7567%2fJJAP.57.01AG03&partnerID=40&md5=0fb8893d5056a641cdf950050597a4e1
dc.description.abstractSeedling growth enhancement of sunflower seeds by DC atmospheric non-thermal Ar-O2 plasma has been proposed. The plasma reactor was simply designed by the composition of multi-pin electrodes bonded on a solderable printed circuit board (PCB) anode. A stable plasma was exhibited in the non-periodical self-pulsing discharge mode during the seed treatment. The experimental results showed that non-thermal plasma treatment had a significant positive effect on the sunflower seeds. Ar-O2 mixed gas ratio, treatment time and power source voltage are the important parameters affecting growth stimulation of sunflower sprouts. In this research, the sunflower seeds treated with liters per minute (LPM) of Ar-O2 plasma at a source voltage of 8 kV for 1 min showed the best results in stimulating the seedling growth. The results in this case showed that the dry weight and average shoot length of the sunflower sprouts were 1.79 and 2.69 times higher and heavier than those of the untreated seeds, respectively. © 2018 The Japan Society of Applied Physics.
dc.subjectElectrodes
dc.subjectPlasma applications
dc.subjectPlasma stability
dc.subjectPrinted circuit boards
dc.subjectDischarge mode
dc.subjectGrowth stimulation
dc.subjectNon-thermal plasma treatment
dc.subjectPlasma reactors
dc.subjectPrinted circuit boards (PCB)
dc.subjectSeedling growth
dc.subjectSource voltage
dc.subjectSunflower seeds
dc.subjectElectric discharges
dc.titleAtmospheric non-thermal argon-oxygen plasma for sunflower seedling growth improvement
dc.typeArticle
dc.rights.holderScopus
dc.identifier.bibliograpycitationJapanese Journal of Applied Physics. Vol 57, No.1 (2018)
dc.identifier.doi10.7567/JJAP.57.01AG03
Appears in Collections:Scopus 1983-2021

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