Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/12639
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dc.contributor.authorJarernboon W.
dc.contributor.authorPimanpang S.
dc.contributor.authorAmornkitbamrung V.
dc.date.accessioned2021-04-05T03:04:41Z-
dc.date.available2021-04-05T03:04:41Z-
dc.date.issued2019
dc.identifier.issn214922
dc.identifier.other2-s2.0-85072831699
dc.identifier.urihttps://ir.swu.ac.th/jspui/handle/123456789/12639-
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85072831699&doi=10.7567%2f1347-4065%2fab0c77&partnerID=40&md5=8c86edb0dd29f23cf366cdbb56cd347e
dc.description.abstractCu2ZnSnS4 (CZTS) films were deposited on the fluorine doped tin oxide substrates using a two-step process. First step, the Cu/Zn/Sn precursors were coated on conductive glass using a direct-current magnetron sputtering method. Second step, Cu/Zn/Sn films were annealed at 600 °C for 1 h under a sulfur atmosphere. X-ray diffraction and Raman spectroscopy indicated kesterite Cu2ZnSnS4 formation. CZTS films were used as the counter electrodes (CEs) of dye-sensitized solar cells. The solar cell efficiency and the short circuit current density increased with increasing CZTS film thickness. The maximum solar cell efficiency based on CZTS CEs reached 6.27% at film thickness of 3.7 ± 0.8 μm, compared to a Pt based dye-sensitized solar cell of 7.52%. © 2019 The Japan Society of Applied Physics.
dc.subjectCopper compounds
dc.subjectEfficiency
dc.subjectElectrodes
dc.subjectFilm thickness
dc.subjectNanocomposites
dc.subjectOxide films
dc.subjectTin oxides
dc.subjectZinc
dc.subjectZinc compounds
dc.subjectConductive glass
dc.subjectCounter electrodes
dc.subjectDirect current magnetron sputtering
dc.subjectFluorine doped tin oxide
dc.subjectKesterites
dc.subjectSolar cell efficiencies
dc.subjectSulfur atmosphere
dc.subjectTwo-step process
dc.subjectDye-sensitized solar cells
dc.titleEffect of sputtered Cu2ZnSnS4 film thickness on dye sensitized solar cell counter electrode performance
dc.typeArticle
dc.rights.holderScopus
dc.identifier.bibliograpycitationJapanese Journal of Applied Physics. Vol 58, No.SI (2019)
dc.identifier.doi10.7567/1347-4065/ab0c77
Appears in Collections:Scopus 1983-2021

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