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dc.contributor.authorAksornniem S.
dc.date.accessioned2021-04-05T03:02:54Z-
dc.date.available2021-04-05T03:02:54Z-
dc.date.issued2019
dc.identifier.other2-s2.0-85078859122
dc.identifier.urihttps://ir.swu.ac.th/jspui/handle/123456789/12353-
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85078859122&doi=10.1109%2fECTI-CON47248.2019.8955184&partnerID=40&md5=34be7a3e9563d9d7e75e566163f78bb7
dc.description.abstractTrapping electron-assisted magnetic recording (TEAMR) is one writing method of hard disk drive (HDD) that reduces the anisotropy energy of magnetic recording layer before writing process. This paper studied the number of free electrons bandfilling at different the flying-height (FH), the relative permittivity of over coat,and electric potential at writer pole by using 3D models simulator. The results indicate that the number of free electrons bandfilling in with 2 nm of flying-height is lower 38 times than without flying-height condition. The relative permittivity of over coat increment is not sufficient to reduce anisotropy energy of L10 ordered FePt. In the last study, the results show that the number of free electrons bandfilling increases slightly while the electric potential at the writer pole increases. In with flying-height case of TEAMR, the number of free electrons per unit cell is very low that cannot affect to reduce media coercivity of L10 ordered FePt. © 2019 IEEE.
dc.subjectElectric potential
dc.subjectHard disk storage
dc.subjectMagnetic anisotropy
dc.subjectMagnetic recording
dc.subjectMagnetism
dc.subjectPermittivity
dc.subjectAnisotropy energies
dc.subjectBand filling effects
dc.subjectBand fillings
dc.subjectFlying heights
dc.subjectHard disk drives
dc.subjectRelative permittivity
dc.subjectTrapping electrons
dc.subjectWriting process
dc.subjectElectrons
dc.titleThe study of the number of free electron bandfilling effect at different flying-height in TEAMR
dc.typeConference Paper
dc.rights.holderScopus
dc.identifier.bibliograpycitationProceedings of the 16th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2019. (2019), p.61-64
dc.identifier.doi10.1109/ECTI-CON47248.2019.8955184
Appears in Collections:Scopus 1983-2021

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