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Please use this identifier to cite or link to this item: https://ir.swu.ac.th/jspui/handle/123456789/12198
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dc.contributor.authorAliev G.N.
dc.contributor.authorAmonkosolpan J.
dc.contributor.authorWolverson D.
dc.date.accessioned2021-04-05T03:02:10Z-
dc.date.available2021-04-05T03:02:10Z-
dc.date.issued2020
dc.identifier.issn9574484
dc.identifier.other2-s2.0-85073646926
dc.identifier.urihttps://ir.swu.ac.th/jspui/handle/123456789/12198-
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85073646926&doi=10.1088%2f1361-6528%2fab4442&partnerID=40&md5=cb078c68a7dfe9c9227a1c2222d797c0
dc.description.abstractSinglet oxygen generation in porous silicon (PSi) was investigated by a magneto-optical experiment. Photoluminescence (PL) quenching due to an energy transfer (ET) process mediated by an exchange interaction was monitored in the spectral range 1.4-2.5 eV and in a magnetic field of 0-6 Tesla at different levels of oxygen concentration and excitation pump power. When a magnetic field was applied, both PL recovery and, for magnetic fields below 2 Tesla and high concentrations of oxygen, an unusual additional pump power dependent quenching of the PL was observed. A rate equation model describing the behavior of PL from PSi with oxygen adsorbed at cryogenic temperatures in magnetic field was developed. The model has been expanded to cover the ET process as a function of the nanoparticle size. © 2019 IOP Publishing Ltd.
dc.subjectEnergy transfer
dc.subjectMagnetic fields
dc.subjectOxygen
dc.subjectPhotoluminescence
dc.subjectPorous silicon
dc.subjectQuenching
dc.subjectSilicon compounds
dc.subjectCryogenic temperatures
dc.subjectExchange mechanism
dc.subjectNano-porous silicon
dc.subjectOxygen concentrations
dc.subjectphotosensitizing
dc.subjectRate-equation models
dc.subjectSinglet oxygen
dc.subjectSinglet oxygen generation
dc.subjectGas generators
dc.titleSinglet oxygen generation by nanoporous silicon: Photoluminescence dynamics in magnetic field
dc.typeArticle
dc.rights.holderScopus
dc.identifier.bibliograpycitationNanotechnology. Vol 31, No.3 (2020)
dc.identifier.doi10.1088/1361-6528/ab4442
Appears in Collections:Scopus 1983-2021

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