Please use this identifier to cite or link to this item:
https://ir.swu.ac.th/jspui/handle/123456789/11796
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wongwanitwatta C. | |
dc.contributor.author | Horprathum M. | |
dc.contributor.author | Chananonnawathorn C. | |
dc.date.accessioned | 2021-04-05T03:01:14Z | - |
dc.date.available | 2021-04-05T03:01:14Z | - |
dc.date.issued | 2020 | |
dc.identifier.issn | 0094243X | |
dc.identifier.other | 2-s2.0-85096469958 | |
dc.identifier.uri | https://ir.swu.ac.th/jspui/handle/123456789/11796 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85096469958&doi=10.1063%2f5.0023323&partnerID=40&md5=df421aaa77987f9d71b82fff71e6a172 | |
dc.description.abstract | This research is described for fabricating molybdenum and sodium-doped molybdenum thin films by dc magnetron sputtering at room temperature for back contact of CIGS solar cells. Generally, the properties of thin films are dependent on deposition parameters. In this paper, we investigated the effect of argon (Ar) flow rate that aims for low resistivity and good adhesion. Films were deposited at different Ar flow rate in range of 10 - 40 sccm. The results present that the resistivity of the molybdenum and sodium-doped molybdenum thin films become higher with the increasing the Ar flow rate corresponding to the microstructure of roughness viewed by field emission scanning electron microscope (FESEM), lower Ar flow rate is smoother surface. © 2020 Author(s). | |
dc.title | Analysis of the properties of molybdenum and sodium-doped molybdenum thin films for back contact of CIGS solar cells | |
dc.type | Conference Paper | |
dc.rights.holder | Scopus | |
dc.identifier.bibliograpycitation | AIP Conference Proceedings. Vol 2279, (2020) | |
dc.identifier.doi | 10.1063/5.0023323 | |
Appears in Collections: | Scopus 1983-2021 |
Files in This Item:
There are no files associated with this item.
Items in SWU repository are protected by copyright, with all rights reserved, unless otherwise indicated.