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Formation of thin DLC films on SiO2/Si substrate using FCVAD technique

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dc.contributor.author Bootkul D.
dc.contributor.author Intarasiri S.
dc.contributor.author Aramwit C.
dc.contributor.author Tippawan U.
dc.contributor.author Yu L.D.
dc.date.accessioned 2021-04-05T03:33:24Z
dc.date.available 2021-04-05T03:33:24Z
dc.date.issued 2013
dc.identifier.issn 0168583X
dc.identifier.other 2-s2.0-84885191214
dc.identifier.uri https://ir.swu.ac.th/jspui/handle/123456789/14165
dc.identifier.uri https://www.scopus.com/inward/record.uri?eid=2-s2.0-84885191214&doi=10.1016%2fj.nimb.2013.02.037&partnerID=40&md5=d938f006528e7a7de4fe6c092606c3c9
dc.description.abstract Diamond-like carbon (DLC) films deposited on SiO2/Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO 2/Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V,-250 V and-450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10-50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely ID/IG ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the ID/IG ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp3 site should be maximized at the arc voltage-450 V for fixed bias voltage. It is expected that, at-450 V bias and 450 V arc, sp3 fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO2 substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC film showed changes in the edge shape, indicating a gradual change in its properties between the edges and the core. © 2013 Elsevier B.V. All rights reserved.
dc.subject Amorphous films
dc.subject Carbon films
dc.subject Chemical bonds
dc.subject Deposition
dc.subject Diamond like carbon films
dc.subject Diamonds
dc.subject Electron energy levels
dc.subject Electron energy loss spectroscopy
dc.subject Electron microscopy
dc.subject Electron scattering
dc.subject Energy dissipation
dc.subject High resolution transmission electron microscopy
dc.subject Inert gas welding
dc.subject Raman spectroscopy
dc.subject Transmission electron microscopy
dc.subject Vacuum applications
dc.subject Vacuum technology
dc.subject Characterization of the films
dc.subject Cross sectional analysis
dc.subject Deposition conditions
dc.subject Diamond like carbon
dc.subject Filtered cathodic vacuum arc deposition
dc.subject Nano-coatings
dc.subject Selective chemical sensors
dc.subject Bias voltage
dc.title Formation of thin DLC films on SiO2/Si substrate using FCVAD technique
dc.type Article
dc.rights.holder Scopus
dc.identifier.bibliograpycitation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. Vol 307, No. (2013), p.147-153
dc.identifier.doi 10.1016/j.nimb.2013.02.037


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